EXTRINSIC‐INTRINSIC STACKING‐FAULT PAIRS IN EPITAXIAL SILICON

Epitaxial Silicon Solar Cells

Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon

Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr12xTiO3 ~LSTO!, deposited onto ~001! silicon wafers by molecular-beam epitaxy is then used to seed $001%-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3 ~PZT! as the ferroelectric layer ...

Kerfless Wafering: Porous Silicon Reorganization and Epitaxial Silicon Growth

Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon

Silicon crystallizes in the diamond-cubic phase and shows only a weak emission at 1.1 eV. Diamond-hexagonal silicon however has an indirect bandgap at 1.5 eV and has therefore potential for application in opto-electronic devices. Here we discuss a method based on advanced silicon device processing to form diamond-hexagonal silicon nano-ribbons. With an appropriate temperature anneal applied to ...

Epitaxial growth of non-cubic silicon

We report about the formation of a Si twinning-superlattice (TSL). Si layers containing 1808 rotation twin boundaries arranged periodical along the [111] direction and only separated by 2.5 nm (corresponding to TSL) have been prepared by molecular beam epitaxy. The method consists of repeating of several growth and annealing circles on boron(B)-predeposited undoped Si substrates. It is shown th...